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2CLG15KV Datasheet, PDF (1/1 Pages) – | |||
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2CL15KV
Technical Specifications
FEATURES
ï§ Avalanche Breakdown Protection
ï§ Low Forward Voltage Drop
ï§ Typical IR less than 0.1 μA
ï§ High Overload Surge Capacity
ABSOLUTE MAXIMUM RATINGS
To order with quick disconnect terminals, use the partnum-TERM
VRRM Repeating Peak Reverse Voltage (kV): 15
TJMAX Max. junction temp.(°C):
120
TSTG Storage temp.(°C):
-40 to +120
IO Avg. Forward Current (mA):
550
IFSM Forward Surge Current (A):
44
ELECTRICAL CHARACTERISTICS
IR1 Normal temp. Reverse Current (μA): 5.0 max
IR2 High temp. Reverse Current (μA): 50 max
VF Forward Voltage (V):
12 max
TEST CONDITIONS
High temp. Reverse Voltage @ 1000 hrs.: VRM=VRRM, f=50Hz, TAMB=100°C Half sine
voltage with f=50Hz applied, TAMB=100°C
High temp. storage @ 1000 Hrs.:
TAMB=130±2°C
Soldering Resistance Heat Test:
Solder trough temp.: 350±10°C,
High pressure smoke test @ 10 hrs.:
Dip Time: 3.5s ± 0.5s
120°C, 2 x 105pa
Insulation Resistance Test (1000MΩ): Between the center of the body and terminal (See Fig. 1)
Insulation Strength Test @ 10KV:
1 min. between center of the body and terminal. (Fig.1 )
Lead bend test:
Force 10 N to the lead, bent it to pos. and neg. 90°
Lead pull test:
Force 70 N of axial to the lead for 1 min.
Insulation resistance test condition: Measure between A
and B by using a DC 500V Insulation resistance tester
Insulation strength test condition: Apply half sine wave
voltage with 10kV wave height between A and B in
insulation liquid
American Microsemiconductor Inc.
133 Kings Road, Madison, NJ 07940
tel. 973-377-9566 fax. 973-377-3078
Page 1 of 1
AS/EN/JISQ/ 9100:2009 REV C and ISO 9001:2008 Certificate No: 45325
http://www.americanmicrosemiconductor.com
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