English
Language : 

2CLG15KV Datasheet, PDF (1/1 Pages) –
2CL15KV
Technical Specifications
FEATURES
 Avalanche Breakdown Protection
 Low Forward Voltage Drop
 Typical IR less than 0.1 μA
 High Overload Surge Capacity
ABSOLUTE MAXIMUM RATINGS
To order with quick disconnect terminals, use the partnum-TERM
VRRM Repeating Peak Reverse Voltage (kV): 15
TJMAX Max. junction temp.(°C):
120
TSTG Storage temp.(°C):
-40 to +120
IO Avg. Forward Current (mA):
550
IFSM Forward Surge Current (A):
44
ELECTRICAL CHARACTERISTICS
IR1 Normal temp. Reverse Current (μA): 5.0 max
IR2 High temp. Reverse Current (μA): 50 max
VF Forward Voltage (V):
12 max
TEST CONDITIONS
High temp. Reverse Voltage @ 1000 hrs.: VRM=VRRM, f=50Hz, TAMB=100°C Half sine
voltage with f=50Hz applied, TAMB=100°C
High temp. storage @ 1000 Hrs.:
TAMB=130±2°C
Soldering Resistance Heat Test:
Solder trough temp.: 350±10°C,
High pressure smoke test @ 10 hrs.:
Dip Time: 3.5s ± 0.5s
120°C, 2 x 105pa
Insulation Resistance Test (1000MΩ): Between the center of the body and terminal (See Fig. 1)
Insulation Strength Test @ 10KV:
1 min. between center of the body and terminal. (Fig.1 )
Lead bend test:
Force 10 N to the lead, bent it to pos. and neg. 90°
Lead pull test:
Force 70 N of axial to the lead for 1 min.
Insulation resistance test condition: Measure between A
and B by using a DC 500V Insulation resistance tester
Insulation strength test condition: Apply half sine wave
voltage with 10kV wave height between A and B in
insulation liquid
American Microsemiconductor Inc.
133 Kings Road, Madison, NJ 07940
tel. 973-377-9566 fax. 973-377-3078
Page 1 of 1
AS/EN/JISQ/ 9100:2009 REV C and ISO 9001:2008 Certificate No: 45325
http://www.americanmicrosemiconductor.com