29RD60 Datasheet, PDF (1/1 Pages) American Microsemiconductor – General Purpose Thyristor

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29RD60
General Purpose Thyristor
MECHANICAL SPECIFICATIONS
Note:
All dimensions
are in millimeters
IMAGE SERVES AS A REPRESENTATION OF THE PACKAGE STYLE ONLY
ABSTRACT
The 29RD60 is a general purpose p-n-p-n silicon
control rectifier used primarily for switching. The
thyristor is enclosed in a hermetically sealed NI-2
metal stud package, which contributes to the
durability and longevity of the device.
mm
AA 39.0 Max
AB 11.0 ± 0.5
AC 4.0 ± 0.5
AD 2.2 Max
BA 8.0
BB 4.0 Max
CA 21.0
CB 19.0 ± 0.3
D1 Ø1.8
D2 Ø3.6
T1 M6 x 1.0
ELECTRICAL CHARACTERISTICS
VRSM VRRM
IT(AV)
ITSM
I²t
PGM PG(AV) VGRM IGFM Tj
Tstg
IRRM / IDRM
(50 t=2-
VDRM
TC Hz) 10ms
Tj
(V) (V) (A) (°C) (A) (A²S) (W) (W) (V) (A) (°C) (°C) (mA) (°C)
700 600 26.0 88 500 1250.00 5.0 0.50 5.0 2.0 125 -40~125 10.0 125
VTM
VGT
IGT
VGD (min)
Tj I_TM
Tc
Tj
VD
(V) (°C) (A) (V) (mA) (°C) (V) (°C) (V)
dv/dt (min)
Tj
VD
(V/μs) (°C) (V)
IH
Rth Pkg.
Typ.
(mA) (°C/W)
1.92 25 80 2.5 50.00 25 0.20 125 2/3VDRM 200 125 2/3VDRM 70 0.8000 NI-2
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United States of America
© 2013 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
Document Page 1 of 1
Revised 06/2013
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325