1N6622 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – FAST RECTIFIER, 1A < I(O) / I(F) < 2A

Diodes > High-Speed/Fast Recovery
1N6622
Technical Specifications
mm
inches
A
25.4
1.0 MIN.
L
3.94
0.155 MAX.
D₁
0.78 DIA.
0.030±0.002
D₂
2.16 DIA.
0.085 MAX.
FEATURES
 Hermetically Sealed Voidless-Glass
 High Reliability
 Excellent operating temp range
 Triple-layer passivation
 High voltage with ultra-fast recovery time
SPECIFICATIONS
Military Grade
I_O Max. Output Current
V_RRM Repeat Peak Rev. V
T_RR Max. Rev. Rec. Time
@ I_F Test Condition
@ I_R Test Condition
V_FM Max. Forward Voltage
I_RM Max. Reverse Current
@ V_R Test Condition
I_RM Max. Peak Rev. Current
@ Temp. Test Condition
Semiconductor Material
Maximum Operating Temp.
Package Style
Mounting Style
Value
N
1.2
600
30
500
1.0
1.4
500
600
200
150
Silicon
175
Axial-4
T
Unit
---
A
V
nS
mA
A
V
nA
V
μA
°C
---
°C
---
---
While this rectifier is con-
sumer-rated, it is ideal for
high reliability applications
specifically in designs with
high temperature tolerance re-
quirements. The 1N6622 fea-
tures very low switching loss
at high temperatures, is met-
allurgically bonded, and is
encased in a non-cavity (void-
less) glass package.
American Microsemiconductor, Inc.
133 Kings Road, Madison, NJ 07940
Tel. [phone] Fax. [phone]
Page 1 of 1
ISO9001:2008, AS/EN/JISQ 9100 Rev. C
Certificate No. 45325
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