1N6096R Datasheet, PDF (1/2 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

25 Amp Schottky Rectifier
1N6095― 1N6096
Dim. Inches
Millimeter
Minimum Maximum Minimum Maximum
A
---
---
---
---
B
.423
.438
10.74
11.13
C
---
.505
---
12.83
D
.600
.800
15.24
20.32
E
.422
.453
10.72
11.51
F
.075
.175
1.91
4.45
G
---
.405
---
10.29
Notes:
H
.163
.189
4.14
4.80
1. 10-32 UNF3A threads
J
---
.250
---
6.35
2. Full threads within 2 1/2 M
.265
.350
6.73
8.89
Dia.
Threads.
N
.020
.065
.510
1.65
3. Stud is Cathode.
P
.060
.095
1.52
2.41
Dia.
DO-203AA (D04)
AMS
Catalog Number
1N6095
1N6096
Working Peak
Reverse Voltage
30V
40V
Repetitive Peak
Reverse Voltage
30V
40V
 Schottky Barrier Rectifier
 Guard Ring Protection
 Low Forward Voltage
 VRRM – 30 & 40 Volts
 25 Amperes
 Reverse Energy Tested
Electrical Characteristics
Average forward current
IF (AV) 25 Amps
TC = 70oC, half sine wave, RJC = 2.0oC/W
Maximum surge current
IFSM 400 Amps
8.3 ms, half sine
Max repetitive peak reverse current
Max peak forward voltage
Max peak forward voltage
Max peak reverse current
Max peak reverse current
Max junction capacitance
IR(OV) 2 Amps
VFM .86 Volts
VFM .60 Volts
IRM 250 mA
IRM 1.5 mA
CJ 6000 pF
f = 1 KHz, 25oC, 1 µsec square wave
IFS = 78.5A: TC = 70oC*
IFM = 5A: TJ = 25oC*
VRRM, TJ = 125oC*
VRRM, TJ = 25oC
VR = 1.0V, TJ = 25oC
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Storage temp range
Operating junction temp range
Max thermal resistance
Typical thermal resistance
Max mounting torque
Weight
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133 Kings Road
Madison, New Jersey 07940
United States of America
© 2016 American Microsemiconductor, Inc.
Specifications are subject to change without notice
Thermal and Mechanical Characteristics
TSTG
TJ
Rjc
Rcs
-65^oC to 150^oC
-65^oC to 150^oC
2.0^oC/W junction to case
0.5^oC/W case to sink
15 inch pounds maximum
0.2 ounces (6.0 grams) typical
Document Page 1 of 2
Revised 05/2016
www.americanmicrosemi.com
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AS9100C and ISO 9001:2008
Certificate No. 131519.01