1N4830 Datasheet, PDF (1/1 Pages) American Microsemiconductor – Technical Specifications

Diodes > Forward Reference Diodes
1N4830
Technical Specifications
A
L
D₁
D₂
mm
25.400 4.440 0.457/0.559 2.030
inches ^{1.000 0.175 0.018/0.022 0.080}
 Hermetically Sealed Glass Package DO-35
 High Reverse Breakdown and Low Leakage
 Excellent Low Voltage Regulation
 Planar Passivated Die Elements
Military / High Rel
@ I_R Test Cond.
V_FM Max. Forward Voltage
@ I_FM Test Cond.
@ I_RM Max. Rev. Current
@ V_R Test Cond.
Semiconductor Material
Package Style
Mounting Style
Value
N
---
2.7
100
100
20
Silicon
DO-35
Any
Unit
mA
V
mA
nA
V
These axial lead diodes
represent configurations of
one to four p-n junctions in
series which may be used in
any application requiring
tight tolerance, low voltage
levels versus current. This
method of low voltage
regulation is comparatively
superior in dynamic impedence
than low voltage zeners where
tunneling instead of avalanche
current is dominant. Typical
applications include use as
signal
limiters,
level
shifters in transistor logic,
meter protectors, and low
voltage regulators.
American Microsemiconductor, Inc.
133 Kings Road, Madison, NJ 07940
Tel. [phone] Fax. [phone]
Page 1 of 1
ISO9001:2008, AS/EN/JISQ 9100 Rev. C
Certificate No. 45325
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