1N23WE Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON MIXER DIODE

S-X BAND POINT CONTACT MIXER DIODES
Point Contact Diodes:
Description
Typical Performance
Applications
Packaging
Electrical Specifications
Part
Number
Noise Figure
3.060 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX (dB)
VSWR
3.060 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX (Ratio)
1N21C
8.5
–
1N21D
7.5
–
1N21E
7.0
1.5
1N21WE
7.0
1.5
1N21F
6.0
1.3
1N21G
5.5
1.3
1N21WG
5.5
1.3
1N416C
8.5
1.5
1N416D
7.5
1.3
1N416E
7.0
1.3
1N416F
6.5
1.3
1N416G
6.0
1.3
Part
Number
1N23
1N23A
1N23B
1N23C
1N23D
1N23E
1N23WE
1N23F
1N23G
1N23WG
1N23H
1N415C
1N415D
1N415E
1N415F
1N415G
1N415H
Noise Figure
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX (dB)
12.0
11.0
10.0
9.0
8.5
7.5
7.5
7.0
6.5
6.5
6.0
9.0
8.5
7.5
7.0
6.5
6.0
VSWR
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX (Ratio)
–
–
1.5
1.5
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.5
1.3
1.3
1.3
1.3
1.3
IF Impedance
3.060 GHz
LO = 1.0 mW
RI = 100 Ohms
MIN/MAX (Ohms)
325 - 465
325 - 465
350 - 450
350 - 450
350 - 450
350 - 450
350 - 450
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
IF Impedance
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MIN/MAX (Ohms)
200 - 600
200 - 600
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
Conversion Loss
3.060 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX (dB)
–
–
–
–
–
5.0
5.0
–
–
7.0
6.5
6.0
Conversion Loss
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX (dB)
–
–
–
–
–
7.0
7.0
6.5
6.0
6.0
5.5
–
–
7.0
6.5
6.0
5.5
Case
Style
PS100
PS100
PS100
PS101
PS101
PS100
PS100
PS101
PS101
PS101
PS101
PS101
Case
Style
PS100
PS100
PS100
PS100
PS100
PS100
PS101
PS100
PS101
PS101
PS100
PS101
PS101
PS101
PS101
PS101
PS101
Operating Temperature:
Storage Temperature: