1N1318 Datasheet, PDF (1/1 Pages) American Microsemiconductor – Low Power Zener Diode

1N1318
Low Power Zener Diode
ABSTRACT
Very low power zener diode with standard ±10% tolerances.
Available with ± 5% tolerance by adding suffix “A” to type
number. Standard cathode-to-case polarity.
MAXIMUM RATINGS
Junction and Storage Temperature Range:
-65 to +175°C (Derate 1mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless noted)
Max Reverse Current
Nominal Voltage
VZ @ IZT = 200μA
(volts)
TA = 25°C
IR @ VR
(μA)
TA = 100°C
IA @ VR
(μA)
23.50
0.1
10
Test Voltage
VR
(volts)
18
Tel. [phone], Fax. [phone]
133 Kings Road,
Madison, New Jersey 07940
United States of America
© 2013 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
Document Page 1 of 1
Revised 06/2013
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325