A42U2604 Datasheet, PDF (9/25 Pages) AMIC Technology – 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

A42U2604 Series
AC Characteristics (continued) (VCC = 2.5V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
Test Conditions:
Input timing reference level: VIH/VIL=1.8V/0.8V
Output reference level: VOH/VOL=1.6V/0.8V
Output Load: 1TTL gate + CL (100pF)
Assumed tT=2ns
Std
# Symbol
Parameter
-50
-60
-80
Unit Notes
Min. Max. Min. Max. Min. Max.
39
tAWD
Column Address to WE Delay Time
(Read-Modify-Write)
37
-
45
-
62
-
ns
11
40
tOEH
OE Hold Time from WE
8
-
10
-
14
-
ns
41
tOEP
OE High Pulse Width
5
-
5
-
5
-
ns
42
tPC
Read or Write Cycle Time (EDO Page) 20
-
24
-
32
-
ns
13
43
tCPA
Access Time from CAS Precharge
(EDO Page)
44
tCP
CAS Precharge Time (EDO Page)
45
tPCM EDO Page Mode RMW Cycle Time
-
23
-
27
-
36 ns
12
8
-
10
-
14
-
ns
50
-
59
-
79
-
ns
46
tCRW
EDO Page Mode CAS Pulse Width
(RMW)
38
-
45
-
61
-
ns
47
tRASP _{RAS Pulse Width (EDO Page)}
50 100K 60 100K 80 100K ns
48
tCSR
CAS Setup Time ( CAS -before- RAS )
5
-
5
-
5
-
ns
3
49
tCHR
CAS Hold Time ( CAS -before- RAS )
10
-
10
-
15
-
ns
3
50
tRPC
RAS to CAS Precharge Time
( CAS -before- RAS )
5
-
5
-
5
-
ns
51
tOEZ
Output Buffer Turn-off Delay from OE
-
3
-
5
-
10 ns
8
52
tRASS _{RAS pulse width ( C -B-R self-refresh)} 100
-
100
-
100
-
µs
53
tRPS
RAS precharge time
( C -B-R self-refresh)
54
tCHS
CAS hold time ( C -B-R self-refresh)
84
- 100 - 132 -
ns
-50
-
-50
-
-50
-
ns
PRELIMINARY (June, 2002, Version 0.3)
8
AMIC Technology, Inc.