A29DL32X Datasheet, PDF (46/50 Pages) AMIC Technology – 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

A29DL32x Series
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ. (Note 1) Max. (Note 2) Unit
Comments
Sector Erase Time
Chip Erase Time
0.7
15
sec Excludes 00h programming
prior to erasure (Note 4)
27
sec
Byte Programming Time
5
150
µs
Word Programming Time
7
Accelerated Word/Byte Programming Time
4
Chip Programming Time
Byte Mode
9
210
µs
Excludes system-level
120
µs _{overhead (Note 5)}
27
sec
(Note 3)
Word Mode
6
18
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycles. Additionally, programming
typically assumes checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 12
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 10,000 cycles.
LATCH-UP CHARACTERISTICS
Description
Input Voltage with respect to VSS on all I/O pins
VCC Current
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE and RESET )
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at time.
Min.
-1.0V
-100 mA
-1.0V
Max.
VCC+1.0V
+100 mA
12.5V
PACKAGE AND PIN CAPACITANCE
Parameter Symbol
Parameter Description
CIN
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0MHz
Test Setup
VIN=0
VOUT=0
VIN=0
TSOP
TF BGA
TSOP
TF BGA
TSOP
TF BGA
Typ.
6
4.2
8.5
5.4
7.5
3.9
Max.
7.5
5
12
6.5
9
4.7
Unit
pF
pF
pF
pF
pF
pF
DATA RETENTION
Parameter
Minimum Pattern Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
PRELIMINARY (May, 2005, Version 0.0)
45
AMIC Technology, Corp.