A416316B Datasheet, PDF (3/25 Pages) AMIC Technology – 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

Selection Guide
Symbol
tRAC
tAA
tCAC
tOEA
tRC
tPC
ICC1
ICC6
Description
Maximum RAS Access Time
Maximum Column Address Access Time
Maximum CAS Access Time
Maximum Output Enable ( OE ) Access Time
Minimum Read or Write Cycle Time
Minimum Fast Page Mode Cycle Time
Maximum Operating Current
Maximum CMOS Standby Current
Functional Description
The A416316B is a high performance CMOS Dynamic
Random Access Memory organized as 65,536 words X
16 bits. The A416316B is fabricated with advanced
CMOS technology and designed with innovative design
techniques resulting in high speed, extremely low power
and wide operating margins at component and system
levels.
The A416316B features a high speed page mode
operation in which high speed read, write and read-write
are performed on any of the bits defined by the column
address. The asynchronous column address uses an
extremely short row address capture time to ease the
system level timing constraints associated with
multiplexed addressing. Output is tri-stated by a column
A416316B Series
-30
-35
-40
Unit
30
35
40
ns
16
18
20
ns
10
11
12
ns
10
11
12
ns
65
70
75
ns
19
21
23
ns
95
85
75
mA
2
2
2
mA
address strobe ( UCAS and LCAS ) which acts as an
output enable independent of RAS . Very fast UCAS and
LCAS to output access time eases system design.
All inputs are TTL compatible. Fast Page Mode
operation allows random access up to 256 X 16 bits
within a page, with cycle time as short as 19/21/23 ns.
The A416316B is best suited for graphics, digital signal
processing and high performance peripherals.
The A416316B is available in JEDEC standard 40-pin
plastic SOJ package and 40/44 TSOP type II package.
PRELIMINARY (November, 2000, Version 0.0)
2
AMIC Technology, Inc.