A29DL16X Datasheet, PDF (3/47 Pages) AMIC Technology – 16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

A29DL16x Series
GENERAL DESCRIPTION
The A29DL16x family consists of 16 megabit, 3.0 volt-only
flash memory devices, organized as 1,048,576 words of 16
bits each or 2,097,152 bytes of 8 bits each. Word mode data
appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7.
The device is designed to be programmed in-system with the
standard 3.0 volt VCC supply, and can also be programmed
in standard EPROM programmers.
The device is available with an access time of 70, 90, or 120
ns. The devices are offered in 48-pin TSOP and 48-ball Fine-
pitch BGA. Standard control pins—chip enable ( CE ), write
enable ( WE ), and output enable ( OE )—control normal read
and write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
Simultaneous Read/Write Operations with Zero
Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory space into
two banks. The device can improve overall system
performance by allowing a host system to program or erase
in one bank, then immediately and simultaneously read from
the other bank, with zero latency. This releases the system
from waiting for the completion of program or erase
operations.
The A29DL16x devices uses multiple bank architectures to
provide flexibility for different applications. Three devices are
available with these bank sizes:
Device
DL162
Bank 1
2 Mb
Bank 2
14 Mb
DL163
4 Mb
12 Mb
DL164
8 Mb
8 Mb
A29DL16x Features
The device offers complete compatibility with the JEDEC
single-power-supply Flash command set standard.
Commands are written to the command register using
standard microprocessor write timings. Reading data out of
the device is similar to reading from other Flash or EPROM
devices.
The host system can detect whether a program or erase
operation is complete by using the device status bits:
RY/ BY pin, I/O7 ( Data Polling) and I/O6/I/O2 (toggle bits).
After a program or erase cycle has been completed, the
device automatically returns to reading array data.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC
detector that automatically inhibits write operations during
power transitions. The hardware sector protection feature
disables both program and erase operations in any
combination of the sectors of memory. This can be achieved
in-s y s t e m or via programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of time,
the device enters the automatic sleep mode. The system
can also place the device into the standby mode. Power
consumption is greatly reduced in both modes.
PRELIMINARY (September, 2004, Version 0.0)
2
AMIC Technology, Corp.