A29DL323 Datasheet, PDF (19/46 Pages) AMIC Technology – 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)

CFI Code List
Address A6 to A0
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
40H
41H
42H
A29L323 Series
Data I/O15 to I/O0
0051H
0052H
0059H
0002H
0000H
0040H
0000H
0000H
0000H
0000H
0000H
0027H
0036H
0000H
0000H
0004H
0000H
000AH
0000H
0005H
0000H
0004H
0000H
0016H
0002H
0000H
0000H
0000H
0002H
0007H
0000H
0020H
0000H
003EH
0000H
0000H
0001H
0050H
0052H
0049H
"QRY" (ASCII code)
Description
Main command set
2 : AMD/FJ standard type
Start address of PRIMARY table
Auxiliary command set
00H : Not supported
Start address of auxiliary algorithm table
Minimum VCC voltage (program / erase)
I/O7 to I/O4 : 1 V/bit
I/O3 to I/O0 : 100 mV/bit
Maximum VCC voltage (program / erase)
I/O7 to I/O4 : 1 V/bit
I/O3 to I/O0 : 100 mV/bit
Minimum VPP voltage
Maximum VPP voltage
Typical word program time (2^N µs)
Typical buffer program time (2^N µs)
Typical sector erase time (2^N ms)
Typical chip erase time (2^N ms)
Maximum word program time (typical time × 2^N)
Maximum buffer program time (typical time × 2^N)
Maximum sector erasing time (typical time × 2^N)
Maximum chip erasing time (typical time × 2^N)
Capacity (2^N Bytes)
I/O information
2 : ×8/×16-bit organization
Maximum number of bytes when two banks are programmed (2^N)
Type of erase block
Information about erase block 1
Bit0 to 15 : y = number of sectors
Bit16 to 31 : z = size
(Z × 256 Bytes)
Information about erase block 2
bit0 to 15 : y = number of sectors
bit16 to 31 : z = size
(z × 256 Bytes)
"PRI" (ASCII code)
PRELIMINARY (May, 2002, Version 0.0)
19
AMIC Technology, Inc.