AMIS-30624 Datasheet, PDF (8/56 Pages) AMI SEMICONDUCTOR – I2C Microstepping Motordriver

AMIS-30624 I²C Microstepping Motordriver
Data Sheet
10.0 DC Parameters
The DC parameters are given for Vbb and temperature in their operating ranges. Currents flowing in the circuit are defined as positive.
Table 5: DC Parameters
Symbol Pin(s)
Parameter
Test Conditions
Motordriver
I_MSmax,Peak
I_MSmax,RMS
Max. current through motor coil
in normal operation
Max. RMS current through coil in normal
operation
I_MSabs
I_MSrel
R_DSon
MOTXP ^{Absolute error on coil current}
MOTXN ^{Error on current ratio I}coilx ^{/ I}coily
MOTYP
MOTYN
On resistance for each motor pin
(including bond wire) at I_MSmax
V_bb = 12V, T_j = 50 °C
V_bb = 8V, T_j = 50 °C
V_bb = 12V, T_j = 150 °C
V_bb = 8V, T_j = 150 °C
I_MSL
Pull down current
Thermal Warning & Shutdown
HiZ mode
T_tw
T_tsd(1) ⁽²⁾
T_low ⁽²⁾
Thermal warning
Thermal shutdown
Low temperature warning
Supply and Voltage Regulator
V_bb
V_bbOTP
I_bat
I_{bat_s}
UV₁
UV₂
V_dd
I_ddStop
V_ddReset
VBB
VDD
Nominal operating supply range
Supply voltage for OTP zapping ⁽³⁾
T_amb ≤ 125 °C
T_amb ≤ 85 °C
Total current consumption
Unloaded outputs
Sleep mode current consumption
Stop voltage high threshold
Stop voltage low threshold
Internal regulated output ⁽⁴⁾
8V < V_bb < 29V
Digital current consumption
V_bb < UV₂
Digital supply reset level @ power down
(5)
I_ddLim
Current limitation
Pin shorted to ground
Switch Input and Hardwire Address Input
Rt__OFF
Rt__ON
V_{bb_sw}
Switch OFF resistance ⁽⁶⁾
Switch ON resistance ⁽⁶⁾
Switch to Gnd or V_bat,
SWI _{Vbb range for guaranteed operation of}
HW _{SWI and HW}
V_{max_sw}
Maximum voltage
T < 1s
I_{lim_sw}
I²C Serial Interface
V_IL
V_IH
SDA
V_nL
SCK
V_nH
Current limitation
Short to Gnd or V_bat
Input level low ⁽⁷⁾
Input level high ⁽⁸⁾
Noise margin at the LOW level for each
connected device (including hysteresis)
Noise margin at the HIGH level for each
connected device (including hysteresis)
Min.
-10
-7
138
6.5
6.5
9.0
7.8
7.1
4.75
10
6
- 0.5
0.7 * V_dd
0.1 * V_dd
0.2 * V_dd
Typ.
Max.
Unit
800
570
0.50
0.55
0.70
0.85
2
145
T_tw + 10
T_tw - 155
3.50
50
8.4
7.5
5
2
30
mA
mA
10
%
7
%
1
Ω
1
Ω
1
Ω
1
Ω
mA
152
°C
°C
°C
18
V
29
V
10.0
V
10.0
mA
100
µA
8.9
V
8.0
V
5.50
V
mA
4.5
V
42
mA
kΩ
2
kΩ
29
V
40V
V
mA
0.3 * V_dd
V
V_dd + 0.5
V
V
AMI Semiconductor – Apr. 2007, Rev 3.1, M-20664-003
8
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