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AMIS-42670 Datasheet, PDF (5/12 Pages) AMI SEMICONDUCTOR – High-Speed CAN Transceiver
AMIS-42670 High-Speed CAN Transceiver
For Long Networks
Data Sheet
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;
sourcing current means the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
VCC
Supply voltage
VCANH
DC voltage at pin CANH
VCANL
DC voltage at pin CANL
VTxD
DC voltage at pin TxD
VRxD
DC voltage at pin RxD
VS
DC voltage at pin S
VREF
DC voltage at pin VREF
Vtran(CANH)
Transient voltage at pin CANH
Vtran(CANL)
Transient voltage at pin CANL
Vesd
Electrostatic discharge voltage at all pins
Latch-up
Tstg
Tamb
Tjunc
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Conditions
0 < VCC < 5.25V; no time limit
0 < VCC < 5.25V; no time limit
Note 1
Note 1
Note 2
Note 4
Note 3
Min. Max.
Unit
-0.3 +7
V
-45
+45
V
-45
+45
V
-0.3
VCC + 0.3 V
-0.3
VCC + 0.3 V
-0.3
VCC + 0.3 V
-0.3 VCC + 0.3 V
-150 +150
V
-150 +150
V
-4
+4
kV
-750 +750
V
100
mA
-55
+155
°C
-40
+125
°C
-40
+150
°C
Notes:
1.
2.
3.
4.
Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol
Parameter
Rth(vj-a)
Thermal resistance from junction to ambient in SO8 package
Rth(vj-s)
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
Unit
150
K/W
45
K/W
AMI Semiconductor – October 07, Rev. 1.0
5
www.amis.com Specifications subject to change without notice