AMIS-710625 Datasheet, PDF (4/7 Pages) AMI SEMICONDUCTOR – 600pdi CIS Module

AMIS-710625-A6: 600pdi CIS Module
Data Sheet
7.0 Electro-Optical Characteristics
The tabled values are measured at 25°C
Table 4: Electro-Optical Characteristics at 25°C
Parameter
Symbol
Typical
Units
Note
Number of photo detectors
2496
Elements
Pixel-to-pixel spacing
Line scanning rate ⁽¹⁾
Clock frequency ⁽²⁾
Bright output voltage ⁽³⁾
Bright output non-uniformity ⁽⁴⁾
Adjacent pixel non-uniformity ⁽⁵⁾
Dark non-uniformity ⁽⁶⁾
Dark output voltage ⁽⁶⁾
Modulation Transfer function ⁽⁷⁾
Tint
fclk
Video output
Up
Uadj
Ud
Vd
MTF
42.3
500
5.0
1.0 +/-0.1
<+/-30
<25
<100
<450
>40
µm
µsec
MHz
V
%
%
mV
mV
%
@ 5.0MHz clock frequency
Notes:
1. Tint: Line scanning rate or integration time; tint is determined by the interval of two SP.
2. fclk: main clock frequency.
3. Vpavg = ∑ Vp(n)/2496; where n=1, 2, 3...., 2496.
4. Up = [(Vpmax - Vpavg) / Vpavg] x 100% or [(Vpavg - Vpmin) / Vpavg] x 100%, where Vpmax = the maximum V(n) and Vpmin = the minimum V(n).
5. Upadj = MAX[ | (Vp(n) - Vp(n+l) | / Vp(n)] x 100%.
Upadj is the non-uniformity in percent between adjacent pixels, where Vp(n) is the n^th pixel in the line scan.
6. Ud = Vdmax – Vdmin.
Vd = the average dark output level.
Vdmin is the minimum output on a black document (LED is turned off).
Vdmax: maximum output voltage of black document (LED is turned off.)
7. MTF = [(Vpmax - Vpmin) / (Vpmax + Vpmin)] x 100 [%]; tested on a 300 lp/inch target.
Vmax: maximum output voltage at 50lp/in and Vmin: minimum output voltage at 50lp/in, where lp/in is the line pairs per inch.
8.0 Recommended Operating Conditions
The tabled values are measured at 25^°C.
Table 5: Recommended Operating Conditions at 25^°C
Parameter
Symbol
Min.
Mean
Max. Units
Power supply
Vdd
4.5
5.0
5.5
V
Vn.
-4.5
-5
-12
V
VLED
5
V
Idd
26
30
34
ma
Ivn
6.0
10.0
ma
ILED
450
500
ma
Input voltage at digital high
Vih
Vdd-1.0
Vdd-.5
Vdd
V
Input voltage at digital low
Clock frequency ⁽¹⁾
Vil
0
fclk
0.8
V
5.5
MHz
Clock pulse high duty cycle
25
%
Clock pulse high duration
Integration time ⁽¹⁾
Operating temperature
50
ns
Tint
0.25
5.0
ms
Top
25
50
°_C
Note:
1. Electrically, including the image sensors, the circuits will operate above 5.5MHz with tint at 455µs. However the light power is fixed, hence with the shorter
integration time, the exposure is reduced. This reduction limits the specification call out to integration time of 500µs at 5.0MHz for 1.0V output.
AMI Semiconductor – Jan. 06, M-20492-001
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