AMIS-732128 Datasheet, PDF (2/9 Pages) AMI SEMICONDUCTOR – 50μm-pitch Wide Aperture Spectroscopic Photodiode Arrays

AMIS-732128, AMIS-732256, AMIS-732512
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
Data Sheet
3.0 Sensor Characteristics
AMI Semiconductor’s self-scanned WSN photodiodes are spaced on a 50µm pitch. The line density is 20 diodes/mm and accordingly
the overall die lengths of the different arrays vary with the number of photodiodes. For example, the 128 pixel array is 6.4mm long, the
256 pixel array is 12.8mm long and the 512 pixel array is 25.6mm long. Each array has four additional dummy photodiodes. On each
side, there is one dark (non-imaging) dummy photodiode and one imaging dummy photodiode. The height of the sensors is 2500µm.
The tall, narrow apertures make these sensors desirable for use in monochromators and spectrographs.
Figure 2: Geometry and Layout of Photodiode Pixels
During normal operation, the photons incident in or near the NP photodiode junction generate free charges that are collected and stored
on the junction's depletion capacitance. The number of collected charges is proportional to the light exposure. Figure 3 shows the
stored signal charge as function of light exposure at a wavelength of 575nm. The exposure is the product of the light intensity in
nW/cm² and integration time in seconds. The charge accumulates linearly until reaching the saturation charge, and the corresponding
exposure is the saturation exposure.
The responsivity may be calculated as the saturation charge divided by saturation exposure. The predicted typical responsivity of a
photodiode is 3.5×10^-4 C/J/cm² at 575nm. Figure 4 shows the predicted responsivity of the photodiodes as a function of wavelength.
AMI Semiconductor – Dec. 05, M-20491-001
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