AMIS-4168X Datasheet, PDF (12/18 Pages) AMI SEMICONDUCTOR – Fault Tolerant CAN Transceiver

AMIS-4168x Fault Tolerant CAN Transceiver
Data Sheet
8.5. Timing Characteristics
VCC = 4.75V to 5.25V; VBAT = 5V to 27V; VSTB-B = VCC; Tjunc = −40°C to +150°C; unless otherwise specified.
Table 10: Timing Characteristics AMIS-4168x
Symbol
Parameter
CANL and CANH output
tt(r-d)
transition time for recessive-
to-dominant
CANL and CANH output
tt(d-r)
transition time for dominant-to-
recessive
tPD(L)
Propagation delay TXD to
RXD (LOW)
tPD(H)
Propagation delay TXD to
RXD (HIGH)
tCANH(min)
tCANL(min)
Minimum dominant time for
wake-up on pin CANH
Minimum dominant time for
wake-up on pin CANL
tdet
Failure detection time
trec
Failure recovery time
Dpc
Pulse-count difference
between CANH and CANL
Conditions
10 to 90%;
C1 = 10nF; C2 = 0; R1 = 125Ω; see Figure 7
10 to 90%;
C1 = 1nF; C2 = 0; R1 = 125Ω; see Figure 7
No failures
C1 = 1nF; C2 = 0; R1 = 125Ω
C1 = C2 = 3.3nF; R1 = 125Ω
Failures 1, 2, 5, and 6a; see Figure 5, 7
C1 = 1nF; C2 = 0; R1 = 125Ω
C1 = C2 = 3.3nF; R1 = 125Ω
Failures 3, 3a, 4, 6, and 7; see Figure 5, 7
C1 = 1nF; C2 = 0; R1 = 125Ω
C1 = C2 = 3.3nF; R1 = 125Ω
No failures
C1 = 1nF; C2 = 0; R1 = 125Ω
C1 = C2 = 3.3nF; R1 = 125Ω
Failures 1, 2, 5, and 6a; see Figure 5, 7
C1 = 1nF; C2 = 0; R1 = 125Ω
C1 = C2 = 3.3nF; R1 = 125Ω
Failures 3, 3a, 4, 6, and 7; see Figure 5, 7
C1 = 1nF; C2 = 0; R1 = 125Ω
C1 = C2 = 3.3nF; R1 = 125Ω
Low power modes; VBAT = 12V
Low power modes; VBAT = 12V
Normal mode
Failure 3 and 3a
Failure 4, 6 and 7
Low power modes; VBAT = 12V
Failure 3 and 3a
Failure 4 and 7
Normal mode
Failure 3 and 3a
Failure 4 and 7
Failure 6
Low power modes; VBAT = 12V
Failures 3, 3a, 4, and 7
Normal mode and failures 1, 2, 4, and 6a
Failure detection (pin ERR-B becomes LOW)
Failure recovery (pin ERR-B becomes HIGH)
Min
Typ
0.35
0.60
0.2
0.3
0.75
1.4
1.2
1.4
1.2
1.5
0.75
2.5
1.2
2.5
1.2
1.5
7
7
1.6
0.3
1.6
0.1
0.3
7
125
0.3
4
4
Max Unit
1.4
µs
0.7
µs
1.5
µs
2.1
µs
1.9
µs
2.1
µs
1.9
µs
2.2
µs
1.5
µs
3.0
µs
1.9
µs
3.0
µs
1.9
µs
2.2
µs
38
µs
38
µs
8.0
ms
1.6
ms
8.0
ms
1.6
ms
1.6
ms
38
µs
750
µs
1. 6 ms
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AMI Semiconductor – Rev. 2.0 – Feb. 07
12
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