MRF342 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – SILICON POWER NPN TRANSISTOR

 
 
Mrf342
NPN  EPITAXIAL  PLANAR  TYPE  RF  POWER  TRANSISTOR  
 Description  :  the  MRF342  IS  a  silicon  
NPN  epitaxial  planar  transistor  designed  
for  RF  power  amplifiers  on  VHF  band  
mobile  radio  applications  .  
The AMERICAN MICROSEMICONDUCTOR
MRF342 is designed for VHF amplifier applications
operating to 150 Mhz  
MAXIMUM RATINGS
I_C
V_CEO
3.0 A
35 V
V_CBO
65 V
V_EBO
4.0 V
P_DISS
55 W @ T_C = 25 °C
T_J
-55 °C to +150 °C
T_STG
-55 °C to +150 °C
θ_JC
3.2 °C/W
 
PACKAGE STYLE TO-220AB
1 = Base 2 = Emitter 3 = Collector
4 = Emitter
 
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO I_C = 20 mA
BV_CES I_C = 20 mA
BV_CBO I_C = 20 mA
BV_EBO I_E = 2.0 mA
I_CES
V_CE = 27 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_OB
V_CB = 27 V
f = 1.0
G_PE
MV_CH_Cz= _{13.5 V POUT = 6.0 W f = 136}
G_PE
MHz
V_CC = 27 V
P_OUT = 24 W f = 136
η_C
MHz
 
MINIMUM TYPICAL MAXIMU
35
M
65
65
4.0
2.0
10
100
20
30
10
11.5
11
12.3
50
60
UNITS
V
V
V
V
mA
---
pF
dB
dB
%
 
Tel.  1-­‐973-­‐377-­‐9566,      Fax.  1-­‐973-­‐377-­‐3078  
133  Kings  Road,    
Madison,  New  Jersey    07940  
United  States  of  America  
©  2014  American  Microsemiconductor,  Inc.  
Specifications  are  subject  to  change  without  notice.  
www.americanmicrosemi.com    
Document  Page  1  of    1  
3Revised  01/2014  
Aerospace  Mgmt.  Sys.  Cert.    
AS/EN/JISQ9100:2009  Rev.  C  
ISO9001:2008  
Cert  No.  45325