MMBT4391 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – SINGLE N-CHANNEL JFE T SWITCH

2N3971/ PN4391,2,3 /MMBT4391
SERIES
SINGLE N-CHANNEL JFE T SWITCH
FE ATURES
Repl acement for Siliconix 2 N3971 /PN/ 4391 , 4392 , & 4393
LOW ON RESISTANCE
r_{DS (on)} ≤ 30 Ω
FAST SWITCHI NG
AB SOLUTE MAXIMUM RATI NGS ¹
t_ON ≤ 15ns
@ 25 °C (unless otherwis e stated)
Maximu m Temp eratures
Storage Temperature (2N3971)
-65 to 200° C
Storage Temperature (PN/MMBT)
-55 to 150° C
Junctio n Operating Temperature 2N3971
-55 to 200° C
Junctio n Operating Temperature (PN 4391,2,3) -55 to 150° C
Maximum Power Dissipation
Continuous Power Dissipation 2N3971
180 0mW
Continuous Power Dissipation (PN/MMBT)
350mW
Maximum Cu rren ts
Gate Current
50mA
Maximum Voltages
Gate to Drain or Source 2N3971
-40V
Gate to Drain or Source (MMBT )
-35V
2N SERIES
TO-18
BOTTOM VIEW
D2
3G
S1
PN SERIES MMBT SERIES
TO-92
SOT-23
BOTTOM VIEW TOP VIEW
D1
DSG
3_G
123
S2
ST AT IC EL ECT R ICA L CHA R ACTERIST ICS @25 °C
SYM. CHARAC TERI STIC
TYP
BV _GSS
V _{GS( o )}
V _{GS( F )}
V _{DS (on)}
I_{DS S}
I_GSS
I_G
Gate to Source
Breakdown Voltage
2N3971
MMBT
Gate to Source
Voltage
2N3971
MMBT
Gate to Source Forward Voltage
0.7
0.25
Drain to Source On Voltage
0.3
0.35
Drain to Source
Saturation Current ²
2N3971
PN
MMBT
2N3971 -5
G ate Leakage Current
PN
-5
Gate Operating Current
-5
(unless otherwise stated )
2N39 71
PN4392
PN439 3
UNIT
MIN MA X MIN MA X MIN MA X
-40
-40
-40
-35
-35
-35
-2 - 5 -2 -5 -0.5 -3
-4 -10 -2 -5 -0.5 -3
V
1
1
1
0.4
0.4
0.4
25 75 25 75 5 30
50 100 25 100 5 60 mA
50
25
5
-100
-100
-100
-1000
-1000
-1000 pA
CONDITIONS
I_G = -1µA, V _DS = 0V
V _DS = 20V, I _D = 1nA
V _DS = 15V, I _D = 10nA
I_G = 1mA, V _DS = 0V
V _GS = 0V, I _D = 3 mA
V _GS = 0V, I _D = 6 mA
V _GS = 0V, I _D = 12mA
V _DS = 20V, V _GS = 0 V
V _GS = -20V, V _DS = 0 V
V _DG = 15V, I _D = 10mA