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| AME8831_08 Datasheet, PDF (7/15 Pages) Analog Microelectronics – 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application | |||
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AME
AME8831
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
n Electrical Specifications (contd.)
Parameter
Dropout Voltage @ VOUT=
VOUT(nom)-2%VOUT(nom)
Over Temerature Shutdown
Symbol
Test Condition
Min
VDO
VOUT(nom)=1.8V
IOUT=150mA
VOUT(nom)=2.5V
IOUT=150mA
VOUT(nom)=2.85V
IOUT=150mA
VOUT(nom)=3V
IOUT=150mA
VOUT(nom)=3.3V
IOUT=150mA
TA=25oC
TJ=-40oC to +125oC
TA=25oC
TJ=-40oC to +125oC
TA=25oC
TJ=-40oC to +125oC
TA=25oC
TJ=-40oC to +125oC
TA=25oC
TJ=-40oC to +125oC
OTS
Thermal shutdown increasing
Over Temerature Hysterisis
OTH
VOUT Temperature Coefficient TC
Power Supply Ripple
Rejection
PSRR
VOUT=3.3V, f=1 kHz,
IOUT = 100mA
COUT=10µF
C(SR)=0.01µF
TA=25oC
BW=200Hz to 100kHz
Output Voltage Noise
IOUT=150mA
eN
COUT=10µF,
C(SR)=0.47µF
TA=25oC
VENBH
1.4
ENB and EN Input Threshold
VENH
VENBL
VIN=2.5V to 5.5V
0
VENL
EN or ENB Input Bias Current IEN
ENB=0, EN=VIN VIN=2.5V to 5.5V
Shutdown Current
Start up Time
ISD
TSTR
ENB=VIN, EN=0 VIN=2.5V to 5.5V
VOUT=3.3V
RLOAD=22â¦
COUT=10µF
CSR=0.01µF
CSR=0.1µF
CSR=0.22µF
TA=25oC
Typ Max
800 850
900
450 500
550
350 400
450
250 350
400
150 250
300
150
20
30
65
100
VIN
0.3
0.1 1
1
2
20
200
450
Units
mV
oC
ppm
dÎ
µVRMS
V
µA
µA
ms
Rev.H.05
7
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