AME8890 Datasheet, PDF (4/8 Pages) Analog Microelectronics – 150mA CMOS LDO

AME, Inc.
AME8890
150mA CMOS LDO
n Electrical Specifications
V _IN = 2.7V, V _EN = V _IN , I _OUT =100 _µA,TA = 25 ^o C unless otherwise noted
Parameter
Symbol
Test Condition
Input Voltage
V_IN
Output Voltage Accuracy
V_O
I_O=0.1m A
Dropout Voltage
V_DROPOUT
I_O=150m A
V_OUT=V_O -2.0%
1.0V<V_O(NOM)<=2.0V
2.0V<V_O(NOM)<=2.8V
2.8V<V_O(NOM)
Current Limit
I_LIM
V_O< 0.1V
Quiescent Current
I_Q
V_IN=6V, I_O=0mA, V_O=V_O(nom)
Ground Pin Current
I_GND
V_IN=6V, I_O =1mA to 150mA
Min
2.7
-3
150
Typ Max
6
3
1300
N/A
N/A
350
30 50
35
Units
V
%
mV
mA
µ^A
µ^A
Line Regulation
REG_LINE
I_O=100_µA
V_IN=2.7V to 6V
1.0<= V_O <= 2.0V -0.3
0.3
%
Load Regulation
Over Temperature Shutdown
Over Temperature Hysterisis
V_O Temperature Coefficient
REG_LOAD
OTS
OTH
TC
Power Supply Rejection
PSRR
Output Voltage Noise
eN
EN Input Threshold
EN Input Bias Current
Shutdown Supply Current
Shutdown Output Voltage
V_EH
V_EL
I_EH
I_EL
I_SD
V_O,SD
Output Under Voltage
V_UV
PG Leakage Current
I_LC
PG Voltage Low
V_OL
V_PG Delay
T_PGD
Note1:V_IN(min)=V_OUT+V_DROPOUT
I_O=100_µA to 150m A
I_O=100m A
C_O=2.2_µF
f=10Hz to 100kHz
I_O=10m A
f=1kHz
f=10kHz
f=100kHz
Co=2.2_µF
V_EN=V_IN
V_EN=0V
V_IN=5V, V_O=0V, V_EN=0V
Output Loading<= 1200 ohm, V=0V
PG ON @ % of V_OUT
V_PG=6V , PG is off
I_SINK=0.1m A
See Timing Diagram on page 6
-4
1
4
%
150
o_C
30
o_C
30
ppm /^oC
50
20
dB
15
30
µ^{Vrm s}
1.6
Vin
V
0
0.4
V
0.1
µ^A
0.1
µ^A
0.5 1
µ^A
0
0.4
V
95 %V_O(NOM)
0.1
µ^A
0.1
V
1.5
5
ms
4