AME8845 Datasheet, PDF (10/18 Pages) Analog Microelectronics – 3A CMOS LDO

AME, Inc.
AME8845
3A CMOS LDO
n Electrical Specifications
V_IN = V_O(Nom) +1V, C_IN=0.1µF, C_OUT=2.2µF, TA = 25^OC unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Input Voltage
V_IN
Note 1
6
V
Output Voltage Accuracy
V_O
I_O=1mA
-1.5
1.5 %
Dropout Voltage
V_DROPOUT
I_O=3A
V_O=V_O(NOM) -2.0%
1.5V<=V_O(NOM) <=1.8V
1.8V<V_O(NOM) <2.5V
2.5V<=V_O(NOM)
1200
700 mV
300 450
Output Current
I_O
V_O>1.2V
3000
mA
Current Limit
I_LIM
V_O>1.2V
3
A
Short Circuit Current
I_SC
V_IN= V_O(NOM)+1V, V_O<0.4V
1.7
A
Quiescent Current
I_Q
I_O=0mA
200 350 µA
Ground Pin Current
I_GND
I_O=1mA to 3A
300
µA
Line Regulation
REG_LINE
I_O=1mA, V_IN=V_O+1 to V_O+2
-0.2 0.1 0.2 %
Load Regulation
REG_LOAD
I_O=1mA to 3A
-1
1%
Over Temperature Shutdown OTS
140
o_C
Over Temperature Hysterisis OTH
30
o_C
V_O Temperature Coefficient
TC
30
ppm/^oC
Power Supply Rejection
PSRR
I_O=100mA
C_O=10µF
f=100Hz
f=1kHz
70
dB
50
Output Voltage Noise
f=10Hz to 100kHz
eN
I_O=10mA
Co=2.2µF
30
µVrms
V_EH
EN Input Threshold
V_EL
I_EH
EN Input Leakage
I_EL
Shutdown Current
I_SD
Note1:V_IN(min) =V_OUT+V_DROPOUT
V_IN=V_IN,_MIN to V_IN, _MAX
V_EN=V_IN=5V
V_EN=0V, V_IN=5V
V_EN=0V, V_IN=5V
V_IN*0.8
0
V_IN
V
0.4
2
µA
2
10 µA
10