AM29LV320MT Datasheet, PDF (60/61 Pages) Advanced Micro Devices – 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory

DATASHEET
Erase and Programming Performance
Changed the typicals and/or maximums of the Chip
Erase Time, Effective Write Buffer Program Time,
Byte/Word Program Time, and Accelerated Effective
Program Time to TBD.
Revision A+4 (February 16, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Added note 2.
Ordering Information
Corrected Valid Combinations table.
Added Note.
AC Characteristics
Input values in the t_WHWH1 and t_WHWH2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also, added note 5.
Input values in the t_WHWH1 and t_WHWH2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also, added note
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4
Revision B (May 16, 2003)
Distinctive Characteristics
Added typical active read current
Global
Converted to full datasheet version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
CMOS Compatible
Corrected Typ and Max values for the I_{CC 1, 2, and 3}.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Changed Accelerated Effective Write Buffer Program
Operation value.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
Removed Word references.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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Am29LV320MT/B
May 16, 2003