AM29LV160M Datasheet, PDF (59/60 Pages) Advanced Micro Devices – 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory

Preliminary
Revision Summary
Revision A (June 24, 2002)
Initial release.
Revision A + 1 (July 3, 2002)
Added LAA064 package.
Corrected power consumption currents.
Changed DC Characteristics Zero Power Flash tables to TBD.
Corrected minimum erase and program cycle endurance.
Revision A+2 (December 6, 2002)
Global
Removed 44-pin SO package. Deleted dashes from ordering part numbers.
Distinctive Characteristics
Added information for SecSi sector, Program Suspend & Resume. Corrected erase
endurance to 100K cycles. Changed section flow to match other MirrorBit data
sheets.
General Description
Changed section flow to match other MirrorBit data sheets.
Connection Diagrams
Corrected Fortified BGA diagram: balls C5, D8, D4, and F1 are now NC.
Ordering Information and Operating Ranges
Removed Commercial and Extended temperature ranges. Corrected Fine-pitch
BGA type to 6 x 8 mm package, FBA048.
Added package markings for the LAA064.
SecSi (Secured Silicon) Sector Flash Memory Region
Added section.
Program Suspend/Program Resume Command Sequence
Added text and flowchart.
Sector Protection/Unprotection
Deleted reference to alternate, high-voltage method of sector protection.
Command Definitions
Modified introductory paragraph to indicate device behavior when presented with
incorrect commands and data. Added mode restrictions to first paragraphs of pro-
gram, sector erase and chip erase subsections.
Command Definitions tables
Replaced previous table with two tables. Byte mode and word mode are now
shown separately. Added SecSi Sector Factory Protect command sequence.
Table 10. Write Operation Status
Added Program Suspend Mode rows to table.
BGA and TSOP Capacitance
Added fine-pitch BGA capacitance to table.
AC Characteristics tables
Typical sector erase time is now 0.4 s in all tables.
August 11, 2003 25974B0
Am29LV160M
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