AM29LV128MH Datasheet, PDF (59/65 Pages) Advanced Micro Devices – 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

DATASHEET
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2)
Unit
Comments
Sector Erase Time
Chip Erase Time
0.5
3.5
sec
Excludes 00h programming
128
256
sec
prior to erasure (Note 6)
Single Byte/Word
Program Time (Note 3)
Byte
60
Word
60
600
µs
600
µs
Accelerated Single Byte/Word
Byte
54
Program Time
(Note 3)
Word
54
540
µs
540
µs
Total Write Buffer Program
Time (Note 4)
240
Effective Write Buffer Program ^{Per Byte}
7.5
Time (Note 5)
Per Word
15
1200
38
75
µs
µs
Excludes system level
overhead (Note 8)
µs
Total Accelerated Write Buffer
Program Time (Note 4)
200
1040
µs
Effective Accelerated Write
Per Byte
6.25
Buffer Program Time
(Note 5)
Per Word
12.5
33
µs
65
µs
Chip Program Time
126
292
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V_CC. Programming specifications assume that
all bits are programmed to 00h.
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
6. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
7. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
8. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
11 for further information on command definitions.
9. The device has a minimum erase and program cycle endurance of 100,000 cycles.
September 9, 2003
Am29LV128MH/L
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