AM29LV065MU Datasheet, PDF (56/62 Pages) Advanced Micro Devices – 64 Megabit (8 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control

DATA SHEET
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2) Unit
Comments
Sector Erase Time
Chip Erase Time
0.5
15
sec
Excludes 00h programming
64
128
sec
prior to erasure (Note 5)
Effective Byte Program Time, using the Write
Buffer (Note 3)
11
57
µs
Effective Accelerated Byte Program Time, using
the Write Buffer (Note 3)
8.8
Single Byte Program Time
100
49
µs
Excludes system level
800
µs
overhead (Note 6)
Accelerated Single Byte Program Time (Note 4)
90
720
µs
Chip Program Time, using the Write Buffer
92
170
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V_CC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V_CC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32–byte write buffer operation.
4. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
10 for further information on command definitions.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Input voltage with respect to V_SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
Input voltage with respect to V_SS on all I/O pins
–1.0 V
V_CC Current
–100 mA
Note: Includes all pins except V_CC. Test conditions: V_CC = 3.0 V, one pin at a time.
Max
12.5 V
V_CC + 1.0 V
+100 mA
54
Am29LV065MU
September 12, 2006