AM29LV256M Datasheet, PDF (50/70 Pages) Advanced Micro Devices – 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control

DATASHEET
TEST CONDITIONS
3.3 V
Device
Under
Test
C_L
6.2 kΩ
2.7 kΩ
Note: Diodes are IN3064 or equivalent.
Figure 11. Test Setup
Table 14. Test Specifications
Test Condition
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C_L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 V_IO
V
Note: If V_IO < V_CC, the reference level is 0.5 V_IO.
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
Steady
OUTPUTS
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
Input
1.5 V
Measurement Level
Note: If V_IO < V_CC, the input measurement reference level is 0.5 V_IO.
Figure 12. Input Waveforms and
Measurement Levels
0.5 V_IO V Output
48
Am29LV256M
September 15, 2003