AM29DL322D Datasheet, PDF (49/54 Pages) Advanced Micro Devices – 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2) Unit
Comments
Sector Erase Time
Chip Erase Time
0.7
15
sec
Excludes 00h programming
49
sec
prior to erasure (Note 4)
Byte Program Time
5
150
µs
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
(Note 3)
Byte Mode
Word Mode
4
120
µs
7
210
µs
Excludes system level
overhead (Note 5)
21
63
sec
14
42
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V_CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V_CC = 2.7 V (3.0 V for regulated devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Input voltage with respect to V_SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
Input voltage with respect to V_SS on all I/O pins
–1.0 V
V_CC Current
–100 mA
Note: Includes all pins except V_CC. Test conditions: V_CC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
Parameter Description
C_IN
Input Capacitance
C_OUT
Output Capacitance
C_IN2
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T_A = 25°C, f = 1.0 MHz.
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Max
12.5 V
V_CC + 1.0 V
+100 mA
Typ Max Unit
6
7.5
pF
8.5
12
pF
7.5
9
pF
DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
Test Conditions
150°C
125°C
Min Unit
10 Years
20 Years
48
Am29DL322D/323D/324D
June 10, 2003