AM29F800B Datasheet, PDF (38/39 Pages) Advanced Micro Devices – 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

PRELIMINARY
REVISION SUMMARY FOR AM29F800B
Revision B
Global
Added -55 speed option. Changed data sheet designa-
tion from Advance Information to Preliminary.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 µs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 µs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 µs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V_ID min and max values are 11.5
to 12.5 V, with a V_CC test condition of 5.0 V. Added
typical values to TTL table. Revised CMOS typical
standby current (I_CC3).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms. In Figure 19, corrected data values for chip
and sector erase.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
Revision C+1
Distinctive Characteristics
Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.
Changed minimum endurance to 1 million write cycles
per sector guaranteed.
AC Characteristics
Erase/Program Operations: Corrected the notes refer-
ence for t_WHWH1 and t_WHWH2. These parameters are
100% tested. Changed t_DS and t_CP specifications for 55
ns device. Changed t_WHWH1 word mode specification
to 12 µs.
Alternate CE# Controlled Erase/Program Operations:
Corrected the notes reference for t_WHWH1 and t_WHWH2.
These parameters are 100% tested. Changed t_DS and
t_CP specifications for 55 ns device. Changed t_WHWH1
word mode specification to 12 µs.
Temporary Sector Unprotect Table
Added note reference for t_VIDR. This parameter is not
100% tested.
Erase and Programming Performance
In Notes 1 and 6, changed the endurance specification
to 1 million cycles.
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Am29F800B