AM29F040 Datasheet, PDF (33/33 Pages) Advanced Micro Devices – 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

DATA SHEET REVISION SUMMARY FOR
AM29F040
Distinctive Characteristics
Changed low power consumption specifications to typ-
ical values.
Added “enhanced power management” bullet.
General Description
Fifth paragraph, changed sector erase time to 1.0 sec.
Product Selector Guide
Removed the -75 (70 ns, ±5%) speed option.
Ordering Information
Added -55 speed option to the example part number.
Removed the -75 speed option from the valid combina-
tions. Added industrial and extended temperature
ranges to -55 valid combinations. Added extended tem-
perature to -70 valid combinations.
Table 1—User Bus Operations
Changed I/O write entry to “PD” and I/O read entry to
“RD”; now matches Table 4. Corrected reference to ta-
bles in Note 2.
Standby Mode
Changed maximum CMOS standby mode current to
5 µA.
Autoselect
Deleted fourth paragraph.
Table 2—Autoselect Codes
Changed table title.
Table 3—Sector Addresses
Changed table title.
Sector Protection
Reworded second paragraph, second sentence.
Sector Unprotection
Deleted after second sentence.
Table 4—Command Definitions
Added “X” to first cycle of first Read/Reset command.
Changed fourth cycle in Byte Program row from “data”
to “PD”. Deleted Note 1. Rewrote Notes 2 and 6.
Sector Erase
Changed time-out to 80 µs. Deleted note. In second
paragraph, deleted third sentence from end. In fourth
paragraph, changed third sentence from end.
User Note for Chip Erase and Sector Erase
Commands
Deleted section.
Erase Suspend
Deleted last sentence of fourth paragraph. Deleted fifth
paragraph.
Table 5—Write Operation Status
Added overbars to DQ7.
DQ7—Data Polling
Fourth paragraph, added “Erase Suspend.”
DQ5—Exceeded Timing Limits
Clarified first sentence in fifth paragraph.
Absolute Maximum Ratings
Corrected V_SS in second sentence to V.
Operating Ranges—V_CC Supply Voltages
Added -55 and -70 speed options. Deleted -75 speed
option.
DC Characteristics
TTL/NMOS Compatible: Changed I_CC1, I_CC2, and V_ID
specifications.
CMOS Compatible: Changed I_CC1, I_CC2, I_CC3 and V_ID
specifications, added typical values. Added Note 4.
AC Characteristics
Read Only Operations Characteristics: Removed -75
speed option. Changed t_GLQV in -55 column to 30 ns.
Combined Notes 1 and 2.
Figure 7—Test Conditions
Changed first C_L in note to -55.
AC Characteristics
Write/Erase/Program Operations (also same table for
Alternate CE Controlled Writes): Removed -75 speed
option. Changed specifications on t_WHWH1, t_WHWH2,
and t_WHWH3.
Erase and Programming Performance
Changed maximum specifications. Clarified note 5. De-
leted Note 2.
Trademarks
Copyright © 1996 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29F040
33