AM29F002 Datasheet, PDF (33/37 Pages) Advanced Micro Devices – 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory

PRELIMINARY
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
Chip Erase Time
7
Byte Programming Time
7
300
Chip Programming Time (Note 3)
1.8
5.4
s
Excludes 00h programming
s
prior to erasure (Note 4)
µs
Excludes system level
s
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0 V V_CC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V_CC = 4.5 V (4.75 V for -55), 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to V_SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V_SS on all I/O pins
–1.0 V
V_CC + 1.0 V
V_CC Current
–100 mA
+100 mA
Note: Includes all pins except V_CC. Test conditions: V_CC = 5.0 V, one pin at a time. RESET# not available on Am29F002N.
TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
C_IN
C_OUT
C_IN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T_A = 25°C, f = 1.0 MHz.
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Typ Max Unit
6
7.5
pF
8.5
12
pF
7.5
9
pF
33
Am29F002/Am29F002N