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AMMC0XXA Datasheet, PDF (31/39 Pages) Advanced Micro Devices – 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card
PRELIMINARY
AC CHARACTERISTICS—ALTERNATE CE# CONTROLLED WRITES
Write/Erase/Program Operations
Parameter Symbols
Card Speed
JEDEC Standard Parameter Description
-100
-150
Unit
tAVAV
tWC
Write Cycle Time
Min
100
150
ns
tAVEL
tAS
Address Setup Time
Min
10
10
ns
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
45
50
ns
tEHDX
tDH
Data Hold Time
Min
20
20
ns
tGLDV
tOEH
Output Enable Hold Time for Embedded Algorithm Min
10
10
ns
tGHEL
Read Recovery Time before Write
Min
0
0
µs
tWLEL
tWS
WE# Setup Time before CE#
Min
0
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
0
ns
tELEH
tCP
CE# Pulse Width
Min
45
50
ns
tEHEL
tCPH
CE# Pulse Width HIGH (Note 2)
Min
20
20
ns
tEHEH3
Embedded Programming Operation (Notes 2)
Typ
8
8
µs
Max
300
300
µs
tEHEH4
Embedded Erase Operation for each 64K byte
Memory Sector (Notes 1)
Typ
1
Max
1.5
1
s
1.5
s
tVCS
VCC Setup Time to Write Enable LOW
Min
50
50
µs
Notes:
1. Rise/fall time ≤10 ns.
2. Card Enable Controlled Programming:
Flash Programming is controlled by the valid combination of the Card Enable (CE1#, CE2#) and Write Enable (WE#) signals.
For systems that use the Card Enable signal(s) to define the write pulse width, all setup, hold, and inactive write enable timing
should be measured relative to the Card Enable signal(s).
AmMC0XXA
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