AM29LV004 Datasheet, PDF (31/36 Pages) Advanced Micro Devices – 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

PRELIMINARY
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC
Std
Description
t_AVAV
t_AVEL
t_ELAX
t_DVEH
t_EHDX
t_GHEL
t_WC
t_AS
t_AH
t_DS
t_DH
t_OES
t_GHEL
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
90
Min
Min
50
Min
50
Min
Min
Min
t_WLEL
t_WS
WE# Setup Time
Min
t_EHWH
t_WH
WE# Hold Time
Min
t_ELEH
t_CP
CE# Pulse Width
Min
50
t_EHEL
t_CPH
CE# Pulse Width High
Min
30
t_WHWH1
t_WHWH1 Programming Operation (Note 2)
Typ
t_WHWH2
t_WHWH2 Sector Erase Operation (Note 2)
Typ
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
100
120
0
50
50
50
50
0
0
0
0
0
50
50
30
30
9
Unit
150
ns
ns
65
ns
65
ns
ns
ns
ns
ns
ns
65
ns
35
ns
µs
sec
Am29LV004
31