AM29LV6402M Datasheet, PDF (3/57 Pages) SPANSION – 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O Control

Am29LV6402M
128 Megabit (4 M x 32-Bit/8 M x 16-Bit)
MirrorBit™ 3.0 Volt-only
Uniform Sector Flash Memory with Versatile I/O™ Control
This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to
the S29GL128N Data Sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 volt read, erase, and program operations
■ VersatileI/O^TM control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V_IO pin; operates
from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBit^TM process
technology
■ SecSi™ (Secured Silicon) Sector region
— 128-doubleword/256-word sector for permanent,
secure identification through an
8-doubleword/16-word random Electronic Serial
Number, accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
■ Flexible sector architecture
— One hundred twenty-eight 32 Kdoubleword (64
Kword) sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■ 100,000 erase cycles per sector
■ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 100 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical write buffer doubleword programming
time: 16-doubleword/32-word write buffer reduces
overall programming time for multiple-word updates
— 4-doubleword/8-word page read buffer
— 16-doubleword/32-word write buffer
■ Low power consumption (typical values at 3.0 V, 5
MHz)
— 26 mA typical active read current
— 100 mA typical erase/program current
— 2 µA typical standby mode current
■ Package options
— 80-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V_ID-level method of
changing code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Publication# 27552 Rev: B Amendment/1
Issue Date: January 23, 2006
Refer to AMD’s Website (www.amd.com) for the latest information.