AM29BL802C Datasheet, PDF (28/46 Pages) SPANSION – 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory

DATA SHEET
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
I_LI
Input Load Current
V_IN = V_SS to 5.5 V,
V_CC = V_{CC max}
I_LIT
A9 Input Load Current
V_CC = V_{CC max}; A9 = 12.5 V
I_LO
Output Leakage Current
V_OUT = V_SS to 5.5 V,
V_CC = V_{CC max}
I_CC1
V_CC Active Read Current
(Notes 1, 2)
CE# = V_IL, OE# = V_IH, 5 MHz
9
I_CC2
V_CC Active Write Current
(Notes 2, 3, 6)
CE# = V_IL, OE# = V_IH
20
I_CC3
V_CC Standby Current (Note 2) CE#, RESET# = V_CC±0.3 V
3
I_CC4
V_CC Standby Current During
Reset (Note 2)
RESET# = V_SS ± 0.3 V
3
I_CC5
Automatic Sleep Mode
(Notes 2, 4)
V_IH = V_CC ± 0.3 V;
V_IL = V_SS ± 0.3 V
OE# = V_IH
OE# = V_IL
3
8
25 MHz
15
I_CC6
V_CC Burst Mode Read Current CE# = V_IL,
(Notes 2, 5)
OE# = V_IH
33 MHz
20
40 MHz
25
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Autoselect and
Temporary Sector Unprotect
V_CC = 3.3 V
–0.5
0.7 x V_CC
11.5
V_OL
V_OH1
V_OH2
V_LKO
Output Low Voltage
I_OL = 4.0 mA, V_CC = V_{CC min}
Output High Voltage
I_OH = –2.0 mA, V_CC = V_{CC min}
I_OH = –100 µA, V_CC = V_{CC min}
Low V_CC Lock-Out Voltage (Note
4)
0.85 x V_CC
V_CC–0.4
2.3
Max
Unit
±1.0
µA
35
µA
±1.0
µA
16
mA
30
mA
10
µA
10
µA
10
µA
20
µA
30
mA
35
mA
40
mA
0.8
V
5.5
V
12.5
V
0.45
V
V
2.5
V
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH. Typical V_CC is 3.0 V.
2. Maximum I_CC specifications are tested with V_CC = V_CCmax.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns. Typical sleep mode
current is 3 µA.
5. 32-word average.
6. Not 100% tested.
26
Am29BL802C
22371C7 November 3, 2006