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| AM29BDS128H Datasheet, PDF (27/89 Pages) SPANSION – 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory | |||
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Addresses
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Addresses
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Data
0017h
0019h
0000h
0000h
0004h
0000h
0009h
0000h
0004h
0000h
0004h
0000h
Data
001xh
0001h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
00xDh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
DATA SHEET
Table 9. System Interface String
Description
VCC Min. (write/erase)
D7âD4: volt, D3âD0: 100 millivolt
VCC Max. (write/erase)
D7âD4: volt, D3âD0: 100 millivolt
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 10. Device Geometry Definition
Description
Device Size = 2N byte
BDS128H = 0018h; BDS640H = 0017h
Flash Device Interface description (refer to CFI publication 100)
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Address 31h: BDS128H = 00FDh; BDS640H = 007Dh
Erase Block Region 3 Information
Erase Block Region 4 Information
May 10, 2006 27024B3
Am29BDS128H/Am29BDS640H
25
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