AM29SL800D Datasheet, PDF (26/46 Pages) Advanced Micro Devices – 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

ADVANCE INFORMATION
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
I_LI
Input Load Current
V_IN = V_SS to V_CC,
V_CC = V_{CC max}
I_LIT
A9 Input Load Current
V_CC = V_{CC max}; A9 = 11.0 V
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC,
V_CC = V_{CC max}
CE# = V_IL, OE# ₌ V_IH,
5 MHz
5
I_CC1
V_CC Active Read Current
(Notes 1, 2)
Byte Mode
CE# = V_IL, OE# ₌ V_IH,
1 MHz
5 MHz
1
5
Word Mode
1 MHz
1
I_CC2
V_CC Active Write Current
(Notes 2, 3, 5)
CE# = V_IL, OE# ₌ V_IH
15
I_CC3
V_CC Standby Current (Note 2) CE#, RESET# = V_CC ± 0.2 V
I_CC4
V_CC Reset Current (Note 2)
RESET# = V_SS ± 0.2 V
I_CC5
Automatic Sleep Mode
(Notes 2, 3)
V_IH = V_CC ± 0.2 V;
V_IL = V_SS ± 0.2 V
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Autoselect and
Temporary Sector Unprotect
V_CC = 2.0 V
0.2
0.2
0.2
–0.5
0.7 x V_CC
9.0
V_OL1
V_OL2
V_OH1
V_OH2
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lock-Out Voltage
(Note 4)
I_OL = 2.0 mA, V_CC = V_{CC min}
I_OL = 100 µA, V_CC = V_{CC min}
I_OH = –2.0 mA, V_CC = V_{CC min}
I_OH = –100 µA, V_CC = V_{CC min}
0.85 x V_CC
V_CC–0.1
1.2
Notes:
1. The I_CC current listed is typically less than 1 mA/MHz, with OE# at V_IH. Typical V_CC is 2.0 V.
2. The maximum I_CC specifications are tested with V_CC = V_CCmax.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 50 ns.
5. Not 100% tested.
Max
±1.0
35
±1.0
10
3
10
3
30
5
5
5
0.3 x V_CC
V_CC + 0.3
11.0
0.25
0.1
1.5
Unit
µA
µA
µA
mA
mA
µA
µA
µA
V
V
V
V
V
V
V
V
March 17, 2003
Am29SL800D
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