AM28F020A Datasheet, PDF (22/35 Pages) Advanced Micro Devices – 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol Parameter Description Test Conditions
Min
Typ
Max
Unit
I_LI
I_LO
I_CCS
I_CC1
I_CC2
(Note 4)
Input Leakage Current
V_CC = V_CC Max,
V_IN = V_CC or V_SS
Output Leakage Current V_CC = V_CC Max,
V_OUT = V_CC or V_SS
V_CC Standby Current
V_CC = V_CC Max
CE# = V_CC + 0.5 V
V_CC Active Read Current V_CC = V_CC Max, CE# = V_IL, OE# = V_IH
I_OUT = 0 mA, at 6 MHz
V_CC Programming Current CE# = V_IL
Programming in Progress
±1.0
µA
±1.0
µA
15
100
mA
20
30
mA
20
30
mA
I_CC3 V_CC Erase Current
(Note 4)
CE# = V_IL
Erasure in Progress
20
30
mA
I_PPS
I_PP1
I_PP2
(Note 4)
V_PP Standby Current
V_PP = V_PPL
V_PP Read Current
V_PP = V_PPH
V_PP Programming Current V_PP = V_PPH
Programming in Progress
±1.0
µA
70
200
µA
10
30
mA
I_PP3 V_PP Erase Current
(Note 4)
V_PP = V_PPH
Erasure in Progress
10
30
mA
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_OL Output Low Voltage
V_OH1 Output High Voltage
V_OH2
I_OL = 5.8 mA
V_CC = V_CC Min
I_OH = –2.5 mA, V_CC = V_CC Min
I_OH = –100 µA, V_CC = V_CC Min
–0.5
0.7
V_CC
0.85
V_CC
V_CC
–0.4
0.8
V
V_CC + 0.5
V
0.45
V
V
V_ID
A₉ Auto Select Voltage
I_ID
A₉ Auto Select Current
V_PPL
V_PPH
V_PP during Read-Only
Operations
V_PP during Read/Write
Operations
A9 = V_ID
A9 = V_ID Max
V_CC = V_CC Max
Note: Erase/Program are inhibited when
V_PP = V_PPL
11.5
0.0
11.4
13.0
V
5
50
µA
V_CC +2.0
V
12.6
V
V_LKO Low V_CC Lock-out Voltage
3.2
3.7
V
Notes:
1. Caution: the Am28F020A must not be removed from (or inserted into) a socket when V_CC or V_PP is applied. If V_CC ≤ 1.0
Volt, the voltage difference between V_PP and V_CC should not exceed 10.0 Volts. Also, the Am28F020A has a V_PP rise time
and fall time specification of 500 ns minimum.
2. I_CC1 is tested with OE# = V_IH to simulate open outputs.
3. Maximum active power usage is the sum of I_CC and I_PP .
4. Not 100% tested.
22
Am28F020A