AM29F040B-1 Datasheet, PDF (20/35 Pages) Advanced Micro Devices – 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
I_LI
Input Load Current
V_IN = V_SS to V_CC, V_CC = V_CC Max
I_LIT
A9 Input Load Current
V_CC = V_CC Max, A9 = 12.5 V
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC, V_CC = V_CC Max
I_CC1
V_CC Active Read Current (Notes 1, 2) CE# = V_IL, OE# = V_IH
I_CC2
V_CC Active Write (Program/Erase)
Current (Notes 2, 3, 4)
CE# = V_IL, OE# = V_IH
I_CC3
V_CC Standby Current (Note 2)
V_IL
Input Low Level
V_IH
Input High Level
V_ID
Voltage for Autoselect
and Sector Protect
CE# = V_IH
V_CC = 5.25 V
V_OL
V_OH
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lock-Out Voltage
I_OL = 12 mA, V_CC = V_CC Min
I_OH = –2.5 mA, V_CC = V_CC Min
Min
–0.5
2.0
10.5
2.4
3.2
Typ Max Unit
±1.0 µA
50
µA
±1.0 µA
20
30
mA
30
40
mA
0.4
1.0 mA
0.8
V
V_CC + 0.5 V
12.5
V
0.45
V
V
4.2
V
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min Typ Max Unit
I_LI
Input Load Current
I_LIT
A9 Input Load Current
I_LO
Output Leakage Current
I_CC1
V_CC Active Read Current
(Notes 1, 2)
V_IN = V_SS to V_CC, V_CC = V_CC Max
V_CC = V_CC Max, A9 = 12.5 V
V_OUT = V_SS to V_CC, V_CC = V_CC Max
CE# = V_IL, OE# = V_IH
±1.0 µA
50
µA
±1.0 µA
20
30
mA
I_CC2
V_CC Active Program/Erase Current
(Notes 2, 3, 4)
CE# ₌ V_IL, OE# _{= VIH}
30
40
mA
I_CC3
V_CC Standby Current (Notes 2, 5) CE# = V_CC ± 0.5 V
V_IL
Input Low Level
V_IH
Input High Level
V_ID
Voltage for Autoselect and Sector
Protect
V_CC = 5.25 V
1
5
µA
–0.5
0.8
V
0.7 x V_CC
V_CC + 0.3 V
10.5
12.5
V
V_OL
Output Low Voltage
V_OH1 Output High Voltage
V_OH2
V_LKO Low V_CC Lock-out Voltage
Notes for DC Characteristics (both tables):
I_OL = 12.0 mA, V_CC = V_CC Min
I_OH = –2.5 mA, V_CC = V_CC Min
I_OH = –100 µA, V_CC = V_CC Min
0.85 V_CC
V_CC –0.4
3.2
0.45
V
V
V
4.2
V
1. The I_CC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V_IH.
2. Maximum I_CC specifications are tested with V_CC = V_CCmax.
3. I_CC active while Embedded Algorithm (program or erase) is in progress.
4. Not 100% tested.
5. For CMOS mode only, I_CC3 = 20 µA max at extended temperatures (> +85°C).
20
Am29F040B