AM29DL322D_05 Datasheet, PDF (2/56 Pages) Advanced Micro Devices – 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

Am29DL322D/323D/324D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recom-
mended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.
For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL032J supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the
S29PL032J Datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank.
— Zero latency between read and write operations
■ Multiple bank architectures
— Three devices available with different bank sizes
(refer to Table 3)
■ SecSi^TM (Secured Silicon) Sector
— Current version of device has 64 Kbytes; future
versions will have 256 bytes
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
■ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
■ Package options
— 63-ball FBGA
— 48-pin TSOP
■ Top or bottom boot block
■ Manufactured on 0.23 µm process technology
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast 70 ns
— Program time: 7 µs/word typical utilizing Accelerate
function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million write cycles guaranteed per
sector
■ 20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■ WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
■ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
Publication# 21534 Rev: D Amendment/+8
Issue Date: December 13, 2005
Refer to AMD’s Website (www.amd.com) for the latest information.