AM29LV081B Datasheet, PDF (1/6 Pages) Advanced Micro Devices – 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory

ADVANCE INFORMATION
Am29LV081B
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s Optimized architecture for Miniature Card and
mass storage applications
s Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
s Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29LV081 device
s High performance
— Full voltage range: access times as fast as 80 ns
— Regulated voltage range: access times as fast
as 70 ns
s Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
s Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Minimum 1,000,000 write cycle guarantee per
sector
s Package option
— 40-pin TSOP
s Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
s Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
This document contains information on a product under development at Advanced Micro Devices. The information
Publication# 21525 Rev: A Amendment/0
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
Issue Date: January 1998
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.