PC28F128M29EWHF Datasheet, PDF (82/87 Pages) Micron Technology – Parallel NOR Flash Embedded Memory

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Electrical Specifications – Program/Erase Characteristics
Electrical Specifications – Program/Erase Characteristics
Table 40: Program/Erase Characteristics
Parameter
Block erase
Erase suspend latency
Block erase timeout
Byte program Single-byte program
Double-/
quadruple-/
octuple-byte program
Byte write to buffer program
Effective write to buffer program
per byte
Word program
Single-word program
Word write to buffer program
Full buffer program with V_PPH
Effective write to buffer program
per word
Effective full buffer program per
word with V_PPH
Program suspend latency
Blank check
PROGRAM/ERASE cycles (per block)
Buffer
Size
–
–
–
–
–
Byte
–
–
–
–
–
Word
–
–
–
–
–
Min
–
–
50
–
–
Typ^{1, 2}
0.5
20
–
15
10
32
32
–
64
64
–
256
256
–
32
1
–
64
1
–
256
1
–
–
–
–
16
–
16
32
–
32
128
–
128
256
–
256
256
–
256
16
–
1
32
–
1
128
–
1
256
–
1
256
–
1
–
70
–
85
–
160
–
2.19
–
1.33
–
0.625
–
15
–
70
–
85
–
160
–
284
–
160
–
4.375
–
2.66
–
1.25
–
1.11
–
0.625
–
–
–
–
20
–
–
–
–
3.2
–
–
– 100,000 –
Notes: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
Max²
4
25
–
175
200
200
200
710
6.25
3.125
2.77
175
200
200
710
1280
800
12.5
6.25
5.55
5
3.125
25
–
–
Unit
s
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
ms
cycles
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
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