AS7C3364PFS32B Datasheet, PDF (8/19 Pages) Alliance Semiconductor Corporation – 3.3V 64K X 32/36 pipeline burst synchronous SRAM

AS7C3364PFS32B
AS7C3364PFS36B
®
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
V_DD, V_DDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
V_IN
–0.5
V_DD + 0.5
V
Input voltage relative to GND (I/O pins)
V_IN
–0.5
V_DDQ + 0.5
V
Power dissipation
P_d
–
1.8
W
Short circuit output current
Storage temperature
Temperature under bias
I_OUT
–
20
mA
T_stg
–65
+150
o_C
T_bias
–65
+135
o_C
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
V_DD
V_DDQ
Vss
Min
Nominal
Max
Unit
3.135
3.3
3.465
V
3.135
3.3
3.465
V
0
0
0
V
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
V_DD
V_DDQ
Vss
Min
Nominal
Max
Unit
3.135
3.3
3.465
V
2.375
2.5
2.625
V
0
0
0
V
12/10/04; v.1.4
Alliance Semiconductor
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