AS4C256K16E0 Datasheet, PDF (6/24 Pages) Alliance Semiconductor Corporation – 5V 256Kx16 CMOS DRAM (EDO)

EDO page mode cycle
Std
Symbol Parameter
t_PC
Read or write cycle time
t_CAP
Access time from CAS precharge
t_CP
CAS precharge time
t_PCM
EDO page mode RMW cycle
t_CRW
Page mode CAS pulse width (RMW)
t_RASP
RAS pulse width
Shaded areas contain advance information.
Refresh cycle
Std
Symbol Parameter
t_CSR
CAS setup time (CAS-before-RAS)
t_CHR
CAS hold time (CAS-before-RAS)
t_RPC
RAS precharge to CAS hold time
CAS precharge time
t_CPT
(CAS-before-RAS counter test)
Shaded areas contain advance information.
Output enable
Std
Symbol Parameter
t_ROH
RAS hold time referenced to OE
t_OEA
OE access time
t_OED
OE to data delay
t_OEZ
Output buffer turnoff delay from OE
t_OEH
OE command hold time
Shaded areas contain advance information.
Self refresh cycle
Std
Symbol Parameter
t_RASS
RAS pulse width
(CBR self refresh)
t_RPS
RAS precharge time
(CBR self refresh)
t_CHS
CAS hold time
(CBR self refresh)
Shaded areas contain advance information.
AS4C256K16E0
®
-30
Min Max
12 –
– 19
3
–
56 –
44 –
30 75K
-35
Min Max
14 –
– 21
4
–
58 –
46 –
35 75K
-50
Min Max Unit
25 – ns
– 23 ns
5
– ns
60 – ns
50 – ns
50 75K ns
Notes
14
13
-30
Min Max
10 –
7
–
0
–
-35
Min Max
10 –
8
–
0
–
-50
Min Max Unit
10 – ns
10 – ns
0
– ns
8
–
8
–
8
– ns
Notes
3
3
-30
Min Max
5
–
– 10
5
–
–
8
8
–
-35
Min Max
5
–
– 10
5
–
–
8
8
–
-50
Min Max Unit
5 – ns
– 10 ns
8 – ns
– 8 ns
8 – ns
Notes
8
-30
-35
-50
Min Max Min Max Min Max Unit
100K – 100K – 100K – ns
85 – 85 – 85 – ns
30 – 30 – 30 – ns
Notes
4/11/01; v.1.1
Alliance Semiconductor
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