AS4C2M32D1A-5BCN Datasheet, PDF (59/63 Pages) Alliance Semiconductor Corporation – Fully synchronous operation

AS4C2M32D1A-5BCN
AS4C2M32D1A-5BIN
Figure 40. Write with Auto Precharge
CK
CK
CKE
COMMAND
A0-A9
t_CK
t_CH t_CL
t_IS t_IH
t_IS t_IH
NOP
WRITE
t_IS t_IH
Col n
NOP
NOP
VALID
VALID
VALID
NOP
NOP
NOP
NOP
NOP
A10
BA0,BA1
Case 1:
t_DQSS=min
DQS
DQ
DM
Case 2:
t_DQSS=max
DQS
DQ
DM
DIS AP
t_IS t_IH
Bank X
t_DQSS
t_DSH
t_DQSH
t_DSH
t_WPST
t_WPRES
t_WPRE
DI
n
t_DQSL
t_DQSS
t_DSS
t_DQSH
t_WPRES
t_WPRE
t_DQSL
DI
n
t_DSS
t_WPST
t_DAL
ACT
RA
RA
BA
DI n = Data In from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DI n
EN AP = Enable Autoprecharge
ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25%
window of the corresponding positive clock edge
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Rev.1.0 Dec 2015