AS4C16M16D1A Datasheet, PDF (58/64 Pages) Alliance Semiconductor Corporation – 66-pin TSOPII PACKAGE

 
16Mx16 DDR1-AS4C16M16D1A
F  igure 38. Bank Read Access
CK
CK
CKE
t_IS t_IH
COMMAND
t_IS t_IH
NOP
A0-A8
t_CK t_CH t_CL
ACT
t_IS t_IH
RA
NOP
NOP
NOP
READ NOP
Col n
PRE
NOP
NOP
ACT
RA
A9,A11,A12
RA
RA
A10
BA0,BA1
RA
t_IS t_IH
Bank X
t_RCD
t_RC
t_RAS
tIS tIH
DIS AP
Bank X
ALL BANKS
ONE BANKS
*Bank X
CL=3
t_RP
RA
Bank X
DM
Case 1:
tAC/tDQSCK=min
DQS
t_RPRE
t_DQSCK
min
t_RPST
t_LZ
DQ
min
DO
n
Case 2:
tAC/tDQSCK=max
t_LZ
min
t_RPRE
t_AC
min
t_DQSCK
max
DQS
DQ
t_LZ
max
DO
n
DO n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n
DIS AP = Disable Autoprecharge
* = ʼn Don't Careʼn , if A10 is HIGH at this point
t_LZ
max
t_AC
max
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS
would be limiting)
t_RPST
t_HZ
max
Don’t Care
Confidential
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Rev.1.1 July 2015