AS4C1M16S Datasheet, PDF (35/53 Pages) Alliance Semiconductor Corporation – 1M x 16 bit Synchronous DRAM

AS4C1M16S
Figure 30. Random Row Write (Interleaving Banks)
(Burst Length=8)
CLK
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CKE ^High
CS#
RAS#
CAS#
WE#
A11
A10
RAx
RBx
RAy
A0-A9 ^RAx
CAx
tRCD
DQM
DQ ^Hi-Z
DAx0
DAx2
DAx1
Activate
Command
Bank A
Write
Command
Bank A
*t_WR>t_WR (min.)
RBx
CBx
tWR*
RAy
tRP
CAy
tWR*
DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1
DBx2
DBx3 DBx4 DBx5
DAy0
DBx6 DBx7
DAy1 DAy2 DAy3
Activate
Command
Bank B
Write
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank B
Don’t Care
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