AS4C32M16SA Datasheet, PDF (15/54 Pages) Alliance Semiconductor Corporation – Single Pulsed RAS Interface

Version 2.0
AS4C32M16SA
512Mbit Single-Data-Rate (SDR)SDRAM
32Mx16 (8M x 16 x 4 Banks)
Operating Currents
VCC = 3.3 V ± 0.3 V ( Recommended Operating Conditions unless otherwise noted )
Max.
Symbol Parameter & Test Condition
-7
Unit Note
ICC1
O_t pe₌ra_tting Cu_, r_tren₌t _t
.
RC RCMIN. RC CKMIN
Active-precharge command cycling, without
Burst Operation
1 bank operation
mA
1
240
ICC2P
ICC2PS
Precharge Standby Current
in Power Down Mode
CS =VIH, CKE≤ V_IL(max)
tCK = min.
tCK = Infinity
7
mA
1
5
mA
1
ICC2N Precharge Standby Current
tCK = min.
58
mA
in Non-Power Down Mode
ICC2NS CS =VIH, CKE≥ VIL(max)
t_CCKKE=
Infinity
≥V
48
mA
ICC3N
ICC3P
No Operating Current
tCK = min, CS = VIH(min)
bank ; active state ( 4 banks)
IH(MIN.)
CKE ≤ V
IL(MAX.)
75
mA
35
mA
(Power down mode)
ICC4
Burst Operating Current
tCK = min
Read/Write command cycling
mA
1,2
170
ICC5
Auto Refresh Current
tCK = min
Auto Refresh command cycling
mA
1
160
ICC6
Notes:
Self Refresh Current
Self Refresh Mode, CKE≤ 0.2V
6
mA
These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum
value of tCK and tRC. Input signals are changed one time during tCK.
These parameter depend on output loading. Specified values are obtained with output open.
Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: [phone] Fax: [phone]
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