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AS7C33256NTD18B Datasheet, PDF (1/18 Pages) Alliance Semiconductor Corporation – 3.3V 256K x 8 Pipelined SRAM with NTD | |||
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February 2005
AS7C33256NTD18B
®
3.3V 256KÃ18 Pipelined SRAM with NTDTM
Features
⢠Organization: 262,144 words à 18 bits
⢠NTD⢠architecture for efficient bus operation
⢠Fast clock speeds to 200 MHz
⢠Fast clock to data access: 3.0/3.5/4.0 ns
⢠Fast OE access time: 3.0/3.5/4.0 ns
⢠Fully synchronous operation
⢠Asynchronous output enable control
⢠Available in 100-pin TQFP package
⢠Byte write enables
⢠Clock enable for operation hold
⢠Multiple chip enables for easy expansion
⢠3.3V core power supply
⢠2.5V or 3.3V I/O operation with separate VDDQ
⢠Self-timed write cycles
⢠Interleaved or linear burst modes
⢠Snooze mode for standby operation
Logic block diagram
A[17:0]
18
CE0
CE1
CE2
R/W
BWa
BWb
ADV / LD
LBO
ZZ
D Address Q
register
Burst logic
CLK
Control
logic
CLK
DQ [a:b]
18
D Data Q
Input
Register
CLK
CLK
CEN
18
D
Q
Write delay
addr. registers
18
CLK
CLK
256K x 18
SRAM
Array
18
18 18
18
CLK
Output
Register
OE
18
OE
DQ [a:b]
Selection Guide
Minimum cycle time
Maximum clock frequency
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
-200
-166
-133
Units
5
6
7.5
ns
200
166
133
MHz
3.0
3.5
4
ns
375
350
325
mA
135
120
110
mA
30
30
30
mA
2/8/05; v.1.5
Alliance Semiconductor
P. 1 of 18
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