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AS7C3256A-8 Datasheet, PDF (1/9 Pages) Alliance Semiconductor Corporation – 3.3V 32K X 8 CMOS SRAM (Common I/O)
March 2005
Preliminary Information
AS7C3256A-8
®
3.3V 32K X 8 CMOS SRAM (Common I/O)
Features
• Organization: 32,768 words × 8 bits
• High speed
- 8 ns address access time
- 5 ns output enable access time
• Very low power consumption: ACTIVE
- 216mW max @ 8 ns
• Very low power consumption: STANDBY
- 7.2 mW max CMOS I/O
• Easy memory expansion with CE and OE inputs
• TTL-compatible, three-state I/O
• 28-pin JEDEC standard packages
- 300 mil SOJ
- 8 × 13.4 mm TSOP 1
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
Logic block diagram
VCC
GND
A0
A1
A2
A3
A4
A5
A6
A7
Input buffer
256 X 128 X 8
Array
(262,144)
Column decoder
AAAAAAA
8 9 10 11 12 13 14
Control
circuit
Pin arrangement
28-pin TSOP 1 (8×13.4 mm)
28-pin SOJ (300 mil)
I/O7
I/O0
WE
OE
CE
A14
1
OE
1
28
A10 A12
2
A11
2
A9
3
A8
4
27
26
25
CE
I/O7
I/O6
A7
A6
3
4
A13
5
24
I/O5
A5
5
WE
6
VCC
A14
7
8
23
22
AS7C3256A
21
I/O4
I/O3
A4
GND A3
6
7
A12
9
A7
10
20
19
I/O2
I/O1
A2
8
A6
11
18
I/O0
A1
9
A5
12
A4
13
17
A0
16
A1
A0
10
A3
14
15
A2
I/O0
11
I/O1
12
I/O2
13
GND
14
28
VCC
27
WE
26
A13
25
A8
24
A9
23
A11
22
OE
21
A10
20
CE
19
I/O7
18
I/O6
17
I/O5
16
I/O4
15
I/O3
Selection guide
Maximum address access time
Maximum output enable access time
Maximum operating current
Maximum CMOS standby current
-8
Unit
8
ns
5
ns
60
mA
2
mA
3/22/05; v.1.0
Alliance Semiconductor
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